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GaAs-FET Power Amplifier 800...900 MHz 0.8 W
KU PA 080090-08 N, GaAs-FET Power Amplifier 800-900 MHz 0.8 W
- Frequency range 800..900 MHz
- Input power for P1dB min. 14 dBm
- Maximum input power +17 dBm
- Output power P1dB typ. 29 dBm (CW)
- typ. 800 mW (CW)
- Output power P3dB typ. 30 dBm (CW)
- typ. 1 W (CW)
- Output power COFDM (1) min. 23 dBm
- min. 200 mW
- Gain (small signal) min. 15 dB
- Gain flatness (small signal) typ. +/-0.5 dB
- Harmonic rejection min. 28 dB @ 28.7 dBm
- IM3 (2) min. 46 dBc @ 24.7 dBm PEP
- Efficiency min. 20 % @ 29 dBm (CW)
- Supply voltage +12 ... 14 V DC
- Quiescent current typ. 0.35 A
- Current consumption typ. 0.35 A
- Operating case temp. range -20 ... +55 °C
- VSWR of load max. 1.8 : 1
- Input connector / impedance N-female / 50 ohms
- Output connector / impedance N-female / 50 ohms
- Case milled aluminium
- Dimensions (mm) 50 x 30 x 22
- Weight 90 g (typ.)
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 Updating... Ċ Jova Cheng, 2017年11月19日 下午9:48
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